, d nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 thyristors silicon controlled rectifiers ,.. designed for industrial and consumer applications such as power supplies, battery chargers, temperature, motor, light and welder controls. ? economical for a wide range of uses ? high surge current ? itsm ** 2"0 amps ? low forward "on" voltage ? 1,2 v (typ) @ itm = 2<> amps ? practical level triggering and holding characteristics ? 10 ma (typ) @ tc - 26'c ? rugged construction in either presafit, stud or isolated stud package ? glass passlvated junctions for maximum reliability maximum ratings mcr6200 s6210 s6220 series scrs 20 amperes rms 100 thru 600 volts rating repetitive peak off-state voltage, note 1 repetitive peak reverse voltage, note 1 mcr6200, s6210, 36220 a mcr6200, sb210, s6220 b mcr6200, S8210, s6220 d mcr6200, s6210, s6220 m non-repetitive peak off-state voltage, note 1 non-repetitive peak reverse voltage, note 1 mcr62qo, s6210, s6220 a mcr6200, s6210, s6220 b mcr6200, s6210, s6220 d mcr6200, s6210, s8220 m rms on-state current (tc = 76c) peak non-repetitive surge current (one full cycle of surge currant at 60 hz, preceded and followed by rated current, tc ? 75ci circuit fusing considerations it - 8,3 me) peak gate power (10 /is max) average gate power operating junction temperature range storage temperature range stud torque symbol vdrom vrrom vdsom vdrom 'toms) itsm ft pgm pg(av) tj t?tg ? value 100 200 400 600 160 260 500 700 20 200 170 40 0.5 -66 to +100 -65 to +150 30 unit volts volte amps amps a2s watts watt ?c ?c in. ib. thermal characteristics characteristic thermal resistance, junction to case mcr6200 s6210, s6220 symbol r?jc max 1.2 1.4 unit ?c/w note 1. ratings apply for open gala condition*, thyrlstor dtvlcaa shall not b? tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking unit an a_ (to-203aa) mcr6200 series s6210 series s6220 series voltage. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics (to - 26c unless otherwise noted.) charaatarfotta intantanaous forward breakover voltage (gate open, tc - 100c) mcr6200, s6210, s6220 a mcr6200, s6210, s6220 b mcr6200, s6210, s6220 d mcr6200, s6210, s6220 m peak blocking current tc - 25c (rated vorom @ tc - 100'c) tc = 100'c peak on-state voltage (it = 100 a peak) cite trigger current (continuous dc) (main terminal voltage = 12 vdc, rl = 30 ohms) gate trigger voltage (continuous dc) (main terminal voltage = 12 vdc, rl = 30 ohms) holding current (either direction) (main terminal voltage * 12 vdc, gate open) oate controlled turn-on time (vd = v(bo|o,lt = 30apeak, iqt *? 200 ma, rise time - 0.1 ps) critical rate-of-rise of off-state voltage (vo = v(bo]0- exponential voltage rise, gate open, tc - 100c) mcr6200, s6210, s6220 a,d mcr6200, s6210, s82zo b mcr6200, s6210, s6220 m symbol v(bo)0 idom. irrom vt iot vgt iho *et dvwt mln 100 200 400 600 ? ? ? ' _ ? " 10 10 10 tvp - ? ? ? ? ? 2 100 160 78 max - 10 2 2.4 15 2 20 ~ - unit volts m ma volts ma volts ma ms v/ms
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